DocumentCode :
2496833
Title :
Investigation of the electron non-radiative transition in GaInNAs/GaAs single quantum well structures by using a piezoelectric photothermal spectroscopy
Author :
Ikari, Tetsuo ; Imai, Kenji ; Fukushima, Sin-ichi ; Kondow, Masahiko
Author_Institution :
Dept. of Electr. & Electron. Eng., Miyazaki Univ., Japan
fYear :
2003
fDate :
17-18 Nov. 2003
Firstpage :
217
Lastpage :
222
Abstract :
Piezoelectric photothermal spectroscopy (PPTS) measurements were carried out at a room temperature for GaInNAs single quantum well structures, with the thicknesses of 10, 7, 5 and 3 nm. The exciton contribution was clearly observed and was superimposed on the two-dimensional band-to-band transition. The thickness dependence of the PPT signal peaks was well understood by the quantum mechanical consideration. The decrease of the well thickness results in the decrease of the quantized energy levels and the exciton binding energy. The present results showed that the new developed PPT methodology was a unique and a powerful tool for investigating the optical absorption spectra of extremely thin quantum well structures.
Keywords :
III-V semiconductors; excitons; gallium compounds; nonradiative transitions; photothermal spectroscopy; piezoelectric semiconductors; semiconductor quantum wells; 10 nm; 3 nm; 5 nm; 7 nm; GaInNAs; PPT signal peaks; PPTS; electron nonradiative transition; exciton binding energy; optical absorption spectra; piezoelectric photothermal spectroscopy; quantized energy levels; thin quantum well structures; two-dimensional band-to-band transition; Absorption; Electrons; Energy states; Excitons; Gain measurement; Gallium arsenide; Quantum mechanics; Spectroscopy; Temperature; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
Type :
conf
DOI :
10.1109/EDMO.2003.1260053
Filename :
1260053
Link To Document :
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