Title :
High efficiency buried quantum wires defined by a local order-disorder transition in Ga0.5In0.5P/ (Al0.3Ga0.7)0.5In0.5P
Author :
Hämisch, Y. ; Steffen, R. ; Forchel, A. ; Röntgen, P.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
The bandgap difference between the ordered and the disordered phase of GaInP of about 100 meV was used for a lateral potential modulation in GaInP/AlGaInP heterostructures by means of masked ion implantation and rapid thermal annealing. The authors found a very sharp transition from the ordered to the disordered state of the material both as a function of the annealing temperature and the implantation dose. The photoluminescence of the buried quantum wires fabricated with mask widths down to 25 nm shows a high quantum efficiency and a maximum blue shift of the wire luminescence of 35 meV
Keywords :
III-V semiconductors; aluminium compounds; buried layers; energy gap; gallium compounds; indium compounds; interface states; ion implantation; order-disorder transformations; photoluminescence; rapid thermal annealing; semiconductor heterojunctions; semiconductor quantum wires; spectral line shift; 100 meV; 25 nm; 35 meV; Ga0.5In0.5P/ (Al0.3Ga0.7 )0.5In0.5P; Ga0.5In0.5P-(Al0.3Ga0.7 )0.5In0.5P; annealing temperature; bandgap difference; buried quantum wires; heterostructures; high quantum efficiency; implantation dose; lateral potential modulation; local order-disorder transition; masked ion implantation; maximum blue shift; photoluminescence; rapid thermal annealing; wire luminescence; Electron beams; Epitaxial growth; Ion implantation; Optical surface waves; Photonic band gap; Potential well; Quantum mechanics; Rapid thermal annealing; Resists; Wires;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380540
