Title :
Heat flow models for silicon-on-insulator structures
Author :
Cheng, Ming-C ; Yu, Feisia
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
Abstract :
Self-heating has become a critical issue for modeling and reliability prediction of SOI devices and circuits due to the low thermal conductive BOX. Accurate and efficient thermal models for SOI MOSFETs and interconnects are therefore very much needed. This study presents several analytical steady-state SOI heat flow models at different levels of accuracy and efficiency for prediction of temperature profiles. The models describe the ID SOI silicon-film temperature profiles and 2D heat flow in FOX, accounting for heat loss to the substrate via BOX and FOX, heat loss to interconnects, and heat exchanges between devices. These models are applied to investigated thermal behavior in single-devices and 2-device SOI structures. Results are verified with the rigorous device simulation.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; thermal conductivity; 2D heat flow; ID SOI silicon-film temperature profiles; SOI MOSFET; device simulation; heat flow models; heat loss; self-heating; silicon-on-insulator structures; thermal behavior; thermal conductive BOX; CMOS digital integrated circuits; Energy consumption; Integrated circuit interconnections; Predictive models; Semiconductor device modeling; Semiconductor devices; Silicon; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1260066
