Aerosol deposition and combined dry/wet etching techniques for fabrication of InP-based quantum dot structures

Author

Maximov, I. ; Gustafsson, A. ; Hansson, H.-C. ; Samuelson, L. ; Seifert, W. ; Wiedensohler, A.

Author_Institution

Lund Univ., Sweden

fYear

1993

fDate

19-22 Apr 1993

Firstpage

727

Lastpage

730

Abstract

The authors present a novel technology for the fabrication of quantum dots (QDs) structures based on the deposition of ultrafine aerosol Ag particles onto the surface of Ga_0.47In_0.53As/InP quantum well structures grown by metal organic vapor phase epitaxy. The quantum well structures consisted of 3 quantum wells (QWs) with nominal thickness of 3, 8 and 18 monolayers with the thinnest QW being on top of the structure. A reference layer of Ga_0.47In _0.53As was grown below QWs for lattice matching control. The QWs were separated by 15 nm barriers of InP and the cladding layer was about 66 nm in thickness. Silver particles 40 nm in diameter were used as an etching mask. QW thickness dependence of quenching of QD luminescence was observed

Keywords

III-V semiconductors; aerosols; cathodoluminescence; etching; gallium arsenide; indium compounds; photoluminescence; radiation quenching; semiconductor growth; semiconductor quantum dots; sputter etching; vapour phase epitaxial growth; InP-based quantum dot structures; QW thickness dependence; aerosol deposition; cathodoluminescence; cladding layer; combined dry/wet etching techniques; etching mask; fabrication; lattice matching control; luminescence; metal organic vapor phase epitaxy; photoluminescence; quantum well structures; reference layer; ultrafine aerosol Ag particles; Aerosols; Epitaxial growth; Epitaxial layers; Fabrication; Indium phosphide; Plasma applications; Plasma stability; Quantum dots; US Department of Transportation; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380541

Filename

380541