• DocumentCode
    2497118
  • Title

    Resonant tunneling observed in InP0.69Sb0.31/InAs-heterostructures grown by LP-MOVPE

  • Author

    Behet, M. ; Stoll, B. ; Schneider, P. ; Küsters, A. Mesquida ; Heime, K.

  • Author_Institution
    RWTH Aachen, Germany
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    719
  • Lastpage
    722
  • Abstract
    The authors report on the observation of double barrier resonant tunneling in the lattice matched InP0.69Sb0.31/InAs material system grown by metal organic vapor phase epitaxy. Layer sequences, I/V-characteristics and a theoretical treatment of resonant tunneling based on the transmission matrix method are presented in this novel material system. The PVC ratio (peak to valley current) and the maximum achievable peak current densities are figures of merit for resonant tunneling structures. These figures of merit are reported
  • Keywords
    III-V semiconductors; indium compounds; semiconductor heterojunctions; tunnelling; I/V-characteristics; InP0.69Sb0.31-InAs; PVC ratio; double barrier; figures of merit; heterostructures; lattice matched; layer sequences; metal organic vapor phase epitaxy; peak current densities; resonant tunnelling; transmission matrix method; Bonding; Current density; Epitaxial growth; Epitaxial layers; Frequency; Indium phosphide; Lattices; Optical materials; Resonant tunneling devices; Semiconductor materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380543
  • Filename
    380543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2497118