Title :
Resonant tunneling observed in InP0.69Sb0.31/InAs-heterostructures grown by LP-MOVPE
Author :
Behet, M. ; Stoll, B. ; Schneider, P. ; Küsters, A. Mesquida ; Heime, K.
Author_Institution :
RWTH Aachen, Germany
Abstract :
The authors report on the observation of double barrier resonant tunneling in the lattice matched InP0.69Sb0.31/InAs material system grown by metal organic vapor phase epitaxy. Layer sequences, I/V-characteristics and a theoretical treatment of resonant tunneling based on the transmission matrix method are presented in this novel material system. The PVC ratio (peak to valley current) and the maximum achievable peak current densities are figures of merit for resonant tunneling structures. These figures of merit are reported
Keywords :
III-V semiconductors; indium compounds; semiconductor heterojunctions; tunnelling; I/V-characteristics; InP0.69Sb0.31-InAs; PVC ratio; double barrier; figures of merit; heterostructures; lattice matched; layer sequences; metal organic vapor phase epitaxy; peak current densities; resonant tunnelling; transmission matrix method; Bonding; Current density; Epitaxial growth; Epitaxial layers; Frequency; Indium phosphide; Lattices; Optical materials; Resonant tunneling devices; Semiconductor materials;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380543
