Title :
A quantitative study of oxygen contamination in InGaAs grown by MBE
Author :
Harmand, J.C. ; Juhel, M.
Author_Institution :
France Telecom, Bagneux, France
Abstract :
The contamination by oxygen in the molecular beam epitaxy of InGaAs was studied. The oxygen concentrations were measured by secondary ion mass spectroscopy in samples grown with interruptions. Quantitative estimations of O bulk concentrations were deduced with a very low detection limit. Correlations with growth conditions and electrical properties were observed
Keywords :
III-V semiconductors; gallium arsenide; impurities; indium compounds; molecular beam epitaxial growth; oxygen; secondary ion mass spectra; semiconductor growth; InGaAs; MBE; O bulk concentrations; O contamination; electrical properties; growth conditions; quantitative study; secondary ion mass spectroscopy; Contamination; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Mass spectroscopy; Molecular beam epitaxial growth; Oxygen; Pollution measurement; Substrates; Telecommunications;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380545
