Title :
Integrated current sensing device for micro IDDQ test
Author :
Nose, Kouichi ; Sakurai, Takayasu
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
A current sensing device, namely a Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement, which can be used for IDDQ testing of internal circuit blocks. The HEMOS can be manufactured and integrated in a VLSI device with the conventional CMOS process. The HEMOS is also helpful in establishing the low standby current by identifying the locations of large standby power consumption (possibly a design fault) using only a few pads
Keywords :
CMOS digital integrated circuits; Hall effect transducers; MOSFET; VLSI; electric current measurement; electric sensing devices; integrated circuit testing; CMOS process; Hall effect MOSFET; VLSI; integrated current sensing device; internal circuit blocks; low standby current; micro IDDQ test; noncontact current measurement; nondisturbing current measurement; standby power consumption; CMOS process; Circuit faults; Circuit testing; Current measurement; Energy consumption; Fault diagnosis; Hall effect; MOSFET circuits; Manufacturing processes; Very large scale integration;
Conference_Titel :
Test Symposium, 1998. ATS '98. Proceedings. Seventh Asian
Print_ISBN :
0-8186-8277-9
DOI :
10.1109/ATS.1998.741633
