Title :
A GaAs Acoustic Sensor Based On Resonant Tunnelling Diodes
Author :
Wang, Jian ; Zhang, Wendong ; Xue, Chenyang ; Zhang, Binzhen ; Li, Jinming
Author_Institution :
North Univ. of China, Taiyuan
Abstract :
This paper reports a novel GaAs cantilever acoustic sensor based on AlAs/In1-xGa1-xAs/GaAs resonant tunneling diode (RTD) with a frequency output. The RTD is incorporated in a 10 mum thick cantilever diaphragm and the fabrication technology of the cantilever diaphragm is based upon the micromachined control holes technology. A relaxation oscillator is obtained with the RTD biased in the negative differential resistance (NDR) region. Pressure applied to the RTD changes the frequency of oscillation due to the shift in current-voltage characteristics. The main feature of this sensor type is the direct frequency output and the sensitivity can be up to 102KHz/KPa.
Keywords :
III-V semiconductors; acoustic transducers; diaphragms; gallium arsenide; micromechanical devices; resonant tunnelling diodes; GaAs; cantilever acoustic sensor; current-voltage characteristics; micromachined control holes technology; negative differential resistance region; oscillation frequency; relaxation oscillator; resonant tunnelling diodes; sensor cantilever diaphragm; Acoustic sensors; Current-voltage characteristics; Diodes; Fabrication; Frequency; Gallium arsenide; Oscillators; Resonant tunneling devices; Sensor phenomena and characterization; Thickness control;
Conference_Titel :
Sensors, 2006. 5th IEEE Conference on
Conference_Location :
Daegu
Print_ISBN :
1-4244-0375-8
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2007.355819
