Semi-insulating InP codoped with Fe and Ti: An effective means to suppress the interdiffusion of Fe and p-type dopants

Author

Wolf, T. ; Zinke, T. ; Krost, A. ; Bimberg, D.

Author_Institution

Inst. fuer Festkorperphysik, Tech. Univ. Berlin, Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

707

Lastpage

710

Abstract

Codoping of InP:Fe with Ti was found to inhibit the pronounced interdiffusion of Fe and p-type dopants. Because of the high thermal stability and the simultaneous properties for excess shallow donors and excess shallow acceptors codoped InP:Fe+Ti remains semi-insulating in contact with symmetric n- and p-type current injecting contacts. In contrast to InP:Fe epitaxial layers, resistivities in excess of 10⁷ Ωcm were obtained in both configurations. Details of the epitaxial growth procedure and of the electrical characteristics of InP:Fe+Ti are presented. The interdiffusion behavior of Fe and p-type dopants as well as its suppression by additional doping with Ti are explained by a comprehensive model

Keywords

III-V semiconductors; chemical interdiffusion; electrical resistivity; indium compounds; iron; semiconductor doping; semiconductor growth; titanium; vapour phase epitaxial growth; InP:Fe,Ti; MOVPE; current injecting contacts; electrical characteristics; epitaxial growth procedure; excess shallow acceptors; excess shallow donors; interdiffusion; model; p-type dopants; resistivities; semi-insulating phase codoping; thermal stability; Conductivity; Contacts; Doping; Electric variables; Epitaxial growth; Epitaxial layers; Indium phosphide; Iron; Semiconductor process modeling; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380546

Filename

380546