DocumentCode :
2497248
Title :
Carbon-doped p-type In0.53Ga0.47As and its application to InP/In0.53Ga0.47As heterojunction bipolar transistors
Author :
Tu, C.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
fYear :
1993
fDate :
19-22 Apr 1993
Firstpage :
695
Lastpage :
698
Abstract :
P-type carbon-doped In0.53Ga0.47As grown by various epitaxial techniques is reviewed. High hole concentrations in In 0.53Ga0.47As can be achieved by using CCl4 or CBr4 as the carbon doping source. The highest hole concentration so far is 9 × 1019 cm-3 by gas-source molecular beam epitaxy with CBr4. Results of InP/In0.53Ga0.47A single and double heterojunction bipolar transistors are summarized
Keywords :
III-V semiconductors; carbon; carrier density; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor growth; C doping sources; InP-InGaAs:C; InP/In0.53Ga0.47As heterojunction bipolar transistors; epitaxial techniques; gas-source molecular beam epitaxy; hole concentrations; p-type; Carbon dioxide; Doping; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Lattices; Metallic superlattices; Molecular beam epitaxial growth; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
Type :
conf
DOI :
10.1109/ICIPRM.1993.380549
Filename :
380549
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2497248
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