High frequency noise performance of AlGaN/InGaN/GaN HEMTs with AlN interlayer

Author

Lan, Guilin ; Xu, Yuehang ; Chen, Yongbo ; Guo, Yunchuan ; Xu, Ruimin

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

Volume

5

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

A systematic physical model of AlGaN/InGaN/GaN heterojunction high electron mobility transistors (HEMTs) is established, and a novel AlGaN/InGaN/GaN HEMT structure with AlN interlayer is proposed in this paper. Polarization effect, interface state, surface state, and traps are considered, and the 2D-numerical simulation results of AlGaN/InGaN/GaN HEMT fit the measured results well. The high frequency noise performance of AlGaN/AlN/InGaN/GaN HEMTs are studied based on the established model. The results show that, because of the enhancement of carrier confinement by inserting AlN layer, the minimum noise figure improved 0.5 dB at 8 GHz, the noise conductance reduced about 50%, and the cut-off frequency increased about 17%.

Keywords

III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device models; surface states; wide band gap semiconductors; 2D-numerical simulation; AlGaN-InGaN-GaN; AlN; HEMT; carrier confinement; frequency 8 GHz; heterojunction high electron mobility transistors; high frequency noise performance; interface state; minimum noise figure; noise conductance; polarization effect; surface state; systematic physical model; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; MODFETs; Noise; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230421

Filename

6230421