Title :
Material parameters for 2D modeling of quaternary quantum well lasers
Author :
Li, Z.M. ; Davies, M. ; Dion, M.M. ; McAlister, S.P.
Author_Institution :
Nat. Res. Council, Ottawa, Ont., Canada
Abstract :
The authors have implemented a simplified Luttinger-Kohn theory to model the optical gain, spontaneous emission and quantum-well carrier concentration of a strained quantum-well laser. The model is based on an anisotropic effective mass approximation. Parameters of the effective mass interpolation over the whole quaternary parameters space of InGaAsP are presented
Keywords :
III-V semiconductors; carrier density; effective mass; gallium arsenide; gallium compounds; indium compounds; interface states; laser theory; quantum well lasers; semiconductor device models; spontaneous emission; InGaAsP; Luttinger-Kohn theory; anisotropic effective mass approximation; optical gain; quantum-well carrier concentration; spontaneous emission; strained quantum-well laser; Anisotropic magnetoresistance; Capacitive sensors; Effective mass; Laser modes; Laser theory; Optical materials; Quantum mechanics; Quantum well lasers; Spontaneous emission; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380554
