Title :
Determination of the refractive indices and interfaces of In0.53Al0.16Ga0.31As and In0.53 Al0.21 layers on InP in the wavelength range from 280 to 1900 nm
Author :
Dinges, H.W. ; Burkhard, H. ; Lösch, R. ; Nickel, H. ; Schlapp, W.
Author_Institution :
Deutsche Bundespost Telekom Forschungs- und Technologiezentrum, Darmstadt, Germany
Abstract :
The refractive indices of In0.53Al0.16Ga0.31As and In0.53 Al0.21Ga0.26As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; desorption; ellipsometry; gallium arsenide; indium compounds; interface structure; refractive index; semiconductor epitaxial layers; semiconductor junctions; 280 to 1900 nm; In0.53Al0.16Ga0.31As; In0.53Al0.21Ga0.26As-InP; atom exchange; desorption; high resolution X-ray diffraction; molecular beam epitaxy growth; refractive indices; spectroscopic ellipsometry; Atomic beams; Atomic layer deposition; Atomic measurements; Ellipsometry; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Spectroscopy; Time measurement; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380555
