Monolithic fabrication of NPN and PNP AlInAs/GaInAs HBTs

Author

Stanchina, W.E. ; Metzger, R.A. ; Pierce, M.W. ; Jensen, J.F. ; McCray, L.G. ; Wong-Quen, R. ; Williams, F.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

569

Lastpage

571

Abstract

The authors demonstrated the feasibility of a new technique for the monolithic fabrication of complementary heterostructure bipolar transistors (HBTs). The process led to coplanar npn and pnp HBTs, the first in the AlInAs/GaInAs material system, which were comparable with the state of the art in HBTs. These devices exhibited unity current gain cutoff frequencies (f_T) up to 99 GHz and 14 GHz for the npn and pnp transistors, respectively. The fabrication scheme allows each of these device types to have individually designed epitaxial structures that are grown in a single molecular beam epitaxy run. Results show that the devices will be capable of tight packing densities for IC applications

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; AlInAs-GaInAs; IC applications; current gain cutoff frequencies; heterostructure bipolar transistors; molecular beam epitaxy; monolithic fabrication; pnp transistors; Cutoff frequency; Epitaxial layers; Etching; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Silicon; Solids; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380557

Filename

380557