Title :
Monolithic fabrication of NPN and PNP AlInAs/GaInAs HBTs
Author :
Stanchina, W.E. ; Metzger, R.A. ; Pierce, M.W. ; Jensen, J.F. ; McCray, L.G. ; Wong-Quen, R. ; Williams, F.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
The authors demonstrated the feasibility of a new technique for the monolithic fabrication of complementary heterostructure bipolar transistors (HBTs). The process led to coplanar npn and pnp HBTs, the first in the AlInAs/GaInAs material system, which were comparable with the state of the art in HBTs. These devices exhibited unity current gain cutoff frequencies (fT) up to 99 GHz and 14 GHz for the npn and pnp transistors, respectively. The fabrication scheme allows each of these device types to have individually designed epitaxial structures that are grown in a single molecular beam epitaxy run. Results show that the devices will be capable of tight packing densities for IC applications
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; AlInAs-GaInAs; IC applications; current gain cutoff frequencies; heterostructure bipolar transistors; molecular beam epitaxy; monolithic fabrication; pnp transistors; Cutoff frequency; Epitaxial layers; Etching; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Silicon; Solids; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380557
