Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film

Author

Pu, M.B. ; Hu, C.G. ; Huang, C. ; Wang, M. ; Miao, Z.L. ; Ma, X.L. ; Wu, X.Y. ; Luo, X.G.

Author_Institution

State Key Lab. of Opt. Technol. for Microfabrication, Inst. of Opt. & Electron., Chengdu, China

Volume

5

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

3

Abstract

We demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20 dB attenuation bandwidth of this structure is larger than 94%, while 40 dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate.

Keywords

boron; elemental semiconductors; genetic algorithms; semiconductor doping; semiconductor thin films; silicon; Si:B; attenuation bandwidth; boron-doped silicon film; extremely broadband terahertz absorber; genetic algorithm; multilayered broadband absorber; multilayered doped silicon film; nearly perfect absorber; optimization; resistive metal; transfer matrix; Absorption; Broadband communication; Doping; Films; Genetic algorithms; Reflection; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230427

Filename

6230427