Title :
The influence of transverse sizes upon characteristics of single-electron transistor
Author :
Abrarnov, I.I. ; Ignatenko, S.A.
Author_Institution :
Belarusian State Univ. of Informatics & Radioelectronics, Minsk, Belarus
Abstract :
The modified physical model of a metal single-electron transistor (SET) was proposed. On the basis of the model, transverse sizes influence of structure on I-V characteristics was investigated.
Keywords :
electric current; semiconductor device models; single electron transistors; I-V characteristics; metal SET; modified physical model; single-electron transistor characteristics; transverse size influence; Artificial intelligence; Electronic mail; Informatics; Quantization; Single electron transistors; Telecommunications;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183314
