Title :
GaInP/GaAs HBTs for microwave applications
Author :
Delage, S. ; di Forte-Poisson, M.A. ; Pons, D.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
The authors present an overview of the current status of the development of the GaInP/GaAs heterojunction bipolar transistor (HBT) technology. One of the most important advantages of using GaInP instead of GaAlAs is technological. Each of the GaInP and GaAs layers can be etched selectively with respect to the other. It is shown that GaInP/GaAs HBTs have identical or superior device performance to GaAlAs/GaAs HBTs and that the etching selectivity facilitates greatly the device fabrication and allows excellent device performance uniformity and reproducibility
Keywords :
III-V semiconductors; etching; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; reviews; GaInP-GaAs; heterojunction bipolar transistor; microwave applications; overview; selective etching; Chemical elements; Degradation; Epitaxial growth; Etching; Gallium arsenide; Heterojunction bipolar transistors; Optical device fabrication; Optical materials; P-n junctions; Reproducibility of results;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380559
