Title :
Design trade-offs in InP based HBT ICs
Author :
Montgomery, R.K. ; Jensen, J.E.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The authors describe the current state of the art results and highlight design tradeoffs encountered for applications in analog, digital, and microwave circuits using InP based heterojunction bipolar transistors (HBTs). InP based HBTs are not merely devices for application in optoelectronic integrated circuits (OEICs). While the OEIC efforts continue, interest is increasing in very high performance systems for analog, digital, and power microwave applications. In the last year, significant improvements in device performance have been accomplished by grading the emitter-base junction and modifying the collector to enhance the breakdown performance. Issues of reliability are now getting attention and the technology is being applied more widely
Keywords :
III-V semiconductors; bipolar MMIC; bipolar analogue integrated circuits; bipolar digital integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated optoelectronics; InP; analog circuits; breakdown performance; collector; digital circuits; emitter-base junction; heterojunction bipolar transistors; microwave circuits; optoelectronic integrated circuits; Clocks; Cutoff frequency; Electric breakdown; Frequency conversion; Heterojunction bipolar transistors; Indium phosphide; Laboratories; Microwave circuits; Microwave devices; Power supplies;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380560
