Title :
The influence of intervalley scattering on I-V characteristics of heterostructure with one tunnel junction and expanded near-contact regions
Author :
Abrarnov, I.I. ; Goncharenko, I.A. ; Kolomejtseva, Nanodev V.
Author_Institution :
Belarusian State Univ. of Informatics & Radioelectronics, Minsk, Belarus
Abstract :
The influence of coupling constant α on I-V characteristics of a heterostructure with one tunnel junction and expanded near-contact regions was investigated. We show that it may cause a significant effect on I-V characteristic calculation results. Calculations were performed with the use of a combined two-band model based on self-consistent solution of the Schrodinger and Poisson equations. This model is a part of the nanoelectronic device simulation system NANODEV.
Keywords :
Poisson equation; Schrodinger equation; electric current; nanoelectronics; semiconductor device models; semiconductor heterojunctions; tunnelling; NANODEV nanoelectronic device simulation system; Poisson equations; Schrodinger equations; combined two-band model; coupling constant; expanded near-contact regions; heterostructure I-V characteristics; intervalley scattering; self-consistent solution; tunnel junction; Gallium arsenide; Helium; Informatics; Nanoscale devices; Ohmic contacts; Physics; Poisson equations; Scattering; Sun;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183317
