Title :
Ohmic and barrier contacts to SiC- and GaN-based microwave diodes
Author :
Boltovets, N.S. ; Lvanov, V.N. ; Sveshnikov, Yu.N. ; Belyaev, A.E. ; Avksentiev, A.Y. ; Konakova, R.V. ; Kudryk, Y.Y. ; Kurakin, A.M. ; Milenin, V.V.
Author_Institution :
State Enterprise Res. Inst., Kiev, Ukraine
Abstract :
The Au-TiBx(Ti)-Al-Ti-n-GaN ohmic contacts and Au-ZrBx-n-6H-SiC barrier contacts were studied before and after rapid thermal annealing at T=700 and 800°C. We measured the component concentration depth profiles and electrical characteristics of the contact systems. It was shown that TiBx buffer layers are promising for application in ohmic contacts to n-GaN and ZrBx in barrier contacts to n-6H SiC.
Keywords :
III-V semiconductors; aluminium; buffer layers; diffusion barriers; electrical contacts; gallium compounds; gold; interface structure; microwave diodes; ohmic contacts; rapid thermal annealing; semiconductor materials; semiconductor-metal boundaries; silicon compounds; titanium; titanium compounds; zirconium compounds; 700 C; 800 C; Au-Ti-Al-Ti-GaN; Au-Ti-Al-Ti-n-GaN ohmic contacts; Au-TiB-Al-Ti-GaN; Au-TiBx-Al-Ti-n-GaN ohmic contacts; Au-ZrB-SiC; Au-ZrBx-n-6H-SiC barrier contacts; GaN; GaN-based microwave diodes; SiC; SiC-based microwave diodes; TiBx buffer layers; ZrBx buffer layers; component concentration depth profiles; contact systems; electrical characteristics; rapid thermal annealing; Artificial intelligence; Buffer layers; Gallium nitride; Gold; Ohmic contacts; Rapid thermal annealing; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183318
