DocumentCode
2497748
Title
A new pseudomorphic In0.2Ga0.8As layers HEMT using Al0.52In0.48P as barrier layer
Author
Ng, G.I. ; Chan, Y.-J. ; Pavlidis, D. ; Kwon, Y. ; Brock, T. ; Kuo, J.M.
Author_Institution
Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
fYear
1993
fDate
19-22 Apr 1993
Firstpage
505
Lastpage
508
Abstract
A new pseudomorphic AlInP/InGaAs high electron mobility transistor (HEMT) grown by gas-source molecular-beam epitaxy has been demonstrated. This new pseudomorphic HEMT design offers: (i) a larger ΔEc than pseudomorphic Al0.22Ga0.78As/I with the same channel composition and thus better confinement, (ii) reduction of DX-center related problems (J. M. Kuo et al., 1993), and (iii) high etching selectivity between GaAs/InGaAs and AlInP and thus improved threshold voltage uniformity due to better gate recess control. The DC and microwave characteristics of submicron gate-length Al0.52In0.48P HEMTs are presented
Keywords
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; deep levels; etching; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor growth; DC characteristics; DX-center related problems; In0.2Ga0.8As-Al0.52In0.48 P; channel composition; confinement; etching selectivity; gas-source molecular-beam epitaxy; gate recess control; high electron mobility transistor; microwave characteristics; threshold voltage; Carrier confinement; Etching; Fabrication; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Leakage current; Schottky barriers; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380573
Filename
380573
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