DocumentCode :
2497767
Title :
Suitable channel structure design for high electron mobility InAlAs/InGaAs MODFET
Author :
Inoue, D. ; Matsumura, K. ; Sawada, M. ; Harada, Y.
Author_Institution :
Sanyo Electric Co., Ltd., Osaka, Japan
fYear :
1993
fDate :
19-22 Apr 1993
Firstpage :
501
Lastpage :
504
Abstract :
The authors developed a suitable channel structure for the N-In 0.52Al0.48As/In0.53Ga0.47As modulation doped structure theoretically based on an analysis of the two-dimensional electron gas (2DEG) distribution. The design structure and its measured electrical characteristics are outlined. 40% at 300K and 75% at 77K increase in the 2DEG mobility was experimentally demonstrated. Its great potential in application to various types of FETs is discussed
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; two-dimensional electron gas; 300 K; 77 K; In0.52Al0.48As-In0.53Ga0.47 As; MODFET; channel structure; high electron mobility transistor; modulation doped structure; two-dimensional electron gas; Electron mobility; Epitaxial layers; HEMTs; Impurities; Indium compounds; Indium gallium arsenide; MODFETs; Scattering; Substrates; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
Type :
conf
DOI :
10.1109/ICIPRM.1993.380574
Filename :
380574
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2497767
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