Title :
MOS-transistors on the Si:Ho in the technology of SHF-devices
Author :
Samokhval, V.V. ; Brinkevich, D.I. ; Prosolovich, V.S. ; Yankovski, Yu M.
Author_Institution :
Byelorussian State Univ., Minsk, Belarus
Abstract :
MOSFET-transistors are active elements of SHF integrated circuits. The SHF-transistor parameters optimization method has been designed. It is shown that holmium doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by holmium allows the improving of the characteristics of MOS structures.
Keywords :
MOSFET; holmium; microwave integrated circuits; silicon; MOSFET-transistors; SHF integrated circuits; Si:Ho; holmium doping; silicon; Helium; Human computer interaction; MOSFET circuits; Rail to rail outputs; Roentgenium;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183328
