A flat gain and higher linearity UWB active variable attenuator

Author

Xing, Guanghui ; Zhang, Wanrong ; Xie, Hongyun ; Ding, Chunbao ; Guo, Zhenjie ; Lu, Zhiyi ; Zhang, Yujie

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

Volume

5

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, an ultra-wideband (3.1~10.6GHz) active variable attenuator is designed. Π-attenuator circuit topology and SiGe HBTs active devices are employed to achieve high gain dynamic range. LC series negative feedback at emitter is used to achieve flat gain, and RC shunt negative feedback is employed to achieve higher linearity. Furthermore, a matching network is considered for input impedance matching. The active variable attenuator is simulated and verified by using Agilent ADS design kit. The results indicate that the gain dynamic range reaches 40dB, the gain flatness is below 3 dB, the S11 is lower than -10 dB, voltage standing wave ratio (VSWR) is below 1.52dB, and the input third order intercept point (IIP3) is 15dBm when the voltage changes from 0.7 ~ 1.8V in the frequency band of 3.1 GHz to 10.6 GHz.

Keywords

Ge-Si alloys; attenuators; heterojunction bipolar transistors; impedance matching; network topology; ultra wideband communication; Π-attenuator circuit topology; Agilent ADS design kit; LC series negative feedback; RC shunt negative feedback; SiGe; SiGe HBT; UWB active variable attenuator; active devices; flat gain; frequency 3.1 GHz to 10.6 GHz; impedance matching; matching network; ultra-wideband attenuator; Attenuation; Attenuators; Gain; Heterojunction bipolar transistors; Impedance matching; Linearity; Negative feedback;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230445

Filename

6230445