DocumentCode
2497794
Title
Effect of laser processing on gallium arsenide device structures
Author
Bekbergenov, S.E.
Author_Institution
Berdakh Karakalpak State Univ., Nukus, Uzbekistan
fYear
2004
fDate
13-17 Sept. 2004
Firstpage
549
Lastpage
550
Abstract
Some aspects of laser processing application in the formation of gallium arsenide surface-barrier structures and ohmic contacts for them are considered on the basis of analysis of experimental results known from literature, as well as those obtained by the author.
Keywords
gallium arsenide; laser materials processing; ohmic contacts; gallium arsenide device structures; laser processing; ohmic contacts; surface-barrier structures; Annealing; Gallium arsenide; Lighting; Optical pulses;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN
966-7968-69-3
Type
conf
DOI
10.1109/CRMICO.2004.183329
Filename
1390311
Link To Document