Title :
Advanced millimeter-wave InP HEMT MMICs
Author :
Duh, K.H.G. ; Liu, S.M.J. ; Kao, M.Y. ; Wan, S.C. ; Tang, O.S.A. ; Ho, P. ; Chao, P.C. ; Smith, P.M.
Author_Institution :
GE Electronics Lab., Syracuse, NY, USA
Abstract :
InP-based high electron mobility transistors (HEMTs) developed have exhibited state-of-the-art low noise and power performance well up to W-band frequencies. High performance V- and W -band monolithic amplifiers based on these devices have also been developed. A full W-band InP three-stage monolithic microwave integrated circuit (MMIC) amplifier yields a measured noise matching and bias decoupling networks. A thorough design and analysis procedure was incorporated, including accurate characterization of the devices and circuit elements at W-band frequencies. The first pass success of these full band MMIC amplifiers indicates the importance of accurate device characterization and thorough circuit designs in millimeter wave monolithic IC development
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; HEMT MMICs; InP; InP-based high electron mobility transistors; V-band amplifier; W-band frequencies; analysis procedure; bias decoupling networks; design; low noise; measured noise matching; monolithic amplifiers; power performance; semiconductor; three-stage monolithic microwave integrated circuit; Frequency; HEMTs; Indium phosphide; Integrated circuit noise; MMICs; MODFETs; Microwave devices; Microwave integrated circuits; Millimeter wave transistors; Monolithic integrated circuits;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380576
