InP/GaAs/GaP/GaAs short period superlattices grown by chemical beam epitaxy

Author

Freundlich, A. ; Bensaoula, A.H. ; Bensaoula, A. ; Rossignol, V.

Author_Institution

Space Vacuum Epitaxy Center, Houston Univ., TX, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

489

Lastpage

492

Abstract

The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n )/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m )/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2×10^-3 and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices

Keywords

III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor superlattices; GaAs substrates; InP-GaAs-GaP; InP/GaAs/GaP/GaAs short period superlattices; chemical beam epitaxy; diffraction patterns; global mismatch; pseudomorphically strained layer superlattice; semiconductor; strain balanced short superlattices; superlattice satellite peaks; Capacitive sensors; Chemicals; Diffraction; Epitaxial growth; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Satellites; Substrates; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380577

Filename

380577