Title :
Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells
Author :
Choi, Woo-Young ; Hirayama, Yuzo ; Fonstad, Clifton G.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
The authors present the results of investigations in which excitonic transitions in compressively strained InGaAs multiple quantum wells (QWs) on InP are studied by absorption and photoluminescence (PL) measurements. Specifically, quantitative exciton parameters such as transition energies, exciton binding energies and radii are estimated from absorption measurements. A comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; InGaAs-InGaAlAs; MQW; absorption; compressively strained InGaAs/InGaAlAs multiple quantum wells; exciton binding energies; exciton radii; excitonic transitions; photoluminescence; semiconductor; transition energies; Absorption; Capacitive sensors; Excitons; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; PIN photodiodes; Photoluminescence; Temperature; Thickness measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380580
