Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells

Author

Choi, Woo-Young ; Hirayama, Yuzo ; Fonstad, Clifton G.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

477

Lastpage

480

Abstract

The authors present the results of investigations in which excitonic transitions in compressively strained InGaAs multiple quantum wells (QWs) on InP are studied by absorption and photoluminescence (PL) measurements. Specifically, quantitative exciton parameters such as transition energies, exciton binding energies and radii are estimated from absorption measurements. A comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; InGaAs-InGaAlAs; MQW; absorption; compressively strained InGaAs/InGaAlAs multiple quantum wells; exciton binding energies; exciton radii; excitonic transitions; photoluminescence; semiconductor; transition energies; Absorption; Capacitive sensors; Excitons; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; PIN photodiodes; Photoluminescence; Temperature; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380580

Filename

380580