Title :
A new Al-free HFET structure: The pseudomorphic p-InP/n-InP/In0.75GaAs double heterostructure δ-doped HEMT
Author :
Küsters, A. Mesquida ; Kohl, A. ; Brittner, S. ; Funke, Th ; Sommer, V. ; Heime, K.
Author_Institution :
RWTH Aachen, Germany
Abstract :
A new type of low pressure metal organic vapor epitaxial grown high electron mobility transistor (HEMT) device is reported. By using only a strained In0.75Ga0.25As quantum well (QW)-channel and InP as a carrier supplying n-type, δ-doped and barrier-enhancement p-type layers, a high performance pseudomorphic double heterostructure (DH)-HEMT has been created. The authors present the growth, device fabrication, material quality, and the DC- and RF-performance of 0.8 μm-devices, which show extremely good characteristics. The approach described here may serve as an useful alternative to InAlAs containing structures because it eliminates many troublesome effects such as kinks, deep levels, interface states, high output conductances and gate leakages, which are attributed to a large extent to impurity-Al interactions
Keywords :
III-V semiconductors; deep levels; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; interface states; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; 0.8 micron; Al-free HFET structure; DC performance; In0.75Ga0.25As; InP; InP-InGaAs; RF-performance; deep levels; device fabrication; gate leakages; growth; high electron mobility transistor; high output conductances; interface states; kinks; material quality; pseudomorphic p-InP/n-InP/In0.75GaAs double heterostructure δ-doped HEMT; semiconductor; DH-HEMTs; Doping; Fabrication; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Optical buffering; Schottky barriers; Schottky diodes;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380581
