DocumentCode :
2497887
Title :
Ultra-high aspect ratio buried silicon nano-channels for biological applications
Author :
Nagarajan, Ranganathan ; Murthy, B. Ramana ; Linn, Linn
Author_Institution :
Inst. of Microelectron., Singapore
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
1276
Lastpage :
1280
Abstract :
It is reported for the first time a process technology to fabricate sub-100 nm silicon nano-channels with ultra high aspect ratio (~160) for micro fluidics, nano-filtration and pathogen detection applications. A novel double passivation deep reactive ion etching process has been developed to realize ultra high aspect ratio silicon nano-channels which is further narrowed by deposition of polysilicon and thermally oxidized to form sub-100 nm buried nano-channels. This technology further provides for in-situ capping of the nano channels which offers significant stress-relief at the top of the nano-channels during subsequent glass bonding and packaging process. By providing in-situ capping capability for the channels we also eliminate potential leakage issues due to poor bonding contact. This channel capping also helps in preventing breakage of the high aspect ratio structures under high anodic bonding pressure. Though the present work was targeted for biological applications, it can easily be used for mainstream MEMS and NEMS applications such a RF resonators, Sensors and Actuators.
Keywords :
microfluidics; nanofiltration; nanoparticles; sputter etching; MEMS; NEMS; anodic bonding pressure; biological applications; double passivation deep reactive ion etching process; in-situ capping; microfluidics; nanofiltration; packaging process; pathogen detection applications; polysilicon deposition; potential leakage; silicon nanochannels; subsequent glass bonding; ultrahigh aspect ratio; Bonding; Etching; Fluidics; Glass; Micromechanical devices; Nanobioscience; Packaging; Passivation; Pathogens; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2006. 5th IEEE Conference on
Conference_Location :
Daegu
ISSN :
1930-0395
Print_ISBN :
1-4244-0375-8
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.355862
Filename :
4178857
Link To Document :
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