Passivation of the silicon semiconductor devices and microwave frequency attachments with the double layer dielectric films from yttrium oxide and dysprosium oxide

Author

Rozhkov, V.A. ; Rodionov, M.A. ; Pashin, A.V. ; Guryanov, A.M.

Author_Institution

Samara State Univ., Russia

fYear

2004

fDate

13-17 Sept. 2004

Firstpage

564

Lastpage

565

Abstract

The recombination properties of silicon passivated with double layer dielectric films of yttrium oxide and dysprosium oxide have been investigated. The values of effective lifetime and surface recombination velocity of the nonequilibrium charge carriers on the interface of the rare-earth elements/silicon-oxide have been defined.

Keywords

dysprosium compounds; microwave integrated circuits; passivation; semiconductor-insulator boundaries; silicon; surface recombination; yttrium compounds; Si-Y₂O₃-Dy₂O₃; double layer dielectric films; dysprosium oxide; effective lifetime; integrated circuits; microwave frequency attachments; nonequilibrium charge carriers; rare-earth elements; recombination properties; silicon semiconductor device passivation; silicon-oxide; solid state. electronics; surface recombination velocity; yttrium oxide; Darmstadtium; Dielectric films; Frequency; Microwave devices; Microwave technology; Molecular beam epitaxial growth; Organizing; Passivation; Silicon; Yttrium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on

Print_ISBN

966-7968-69-3

Type

conf

DOI

10.1109/CRMICO.2004.183336

Filename

1390318