An Investigation of Self-heating effect for npn SiGe HBTs Fabricated on thick-film SOI Substrates

Author

Liao, Shu-Hui

Author_Institution

Dept. of Electron. Eng., Chung Chou Univ. of Sci. & Technol., Changhua, Taiwan

fYear

2012

fDate

2-5 Oct. 2012

Firstpage

481

Lastpage

483

Abstract

This paper provides a comprehensive analysis of electro-thermal behavior of the SiGe HBTs on SOI substrate based on two dimensional simulations. The impact of electrical behavior based on physical simulation and electrical characterization were analyzed in detail. Various aspects of the optimization of device performances are described. The impact of self-heating effects in device was analyzed in several different areas. All the results are used for designing and optimizing SiGe HBTs on SOI devices performance.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; optimisation; semiconductor device models; semiconductor materials; silicon-on-insulator; thick film circuits; SiGe; electrothermal behavior; npn HBT; optimization; physical simulation; self-heating effect investigation; thick-film SOI substrate; Heterojunction bipolar transistors; Performance evaluation; Silicon germanium; Silicon on insulator technology; Substrates; Thermal resistance; SiGe HBTs; self-heating effects; silicon-on-insulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Consumer Electronics (GCCE), 2012 IEEE 1st Global Conference on

Conference_Location

Tokyo

Print_ISBN

978-1-4673-1500-5

Type

conf

DOI

10.1109/GCCE.2012.6379664

Filename

6379664