Title :
An Investigation of Self-heating effect for npn SiGe HBTs Fabricated on thick-film SOI Substrates
Author_Institution :
Dept. of Electron. Eng., Chung Chou Univ. of Sci. & Technol., Changhua, Taiwan
Abstract :
This paper provides a comprehensive analysis of electro-thermal behavior of the SiGe HBTs on SOI substrate based on two dimensional simulations. The impact of electrical behavior based on physical simulation and electrical characterization were analyzed in detail. Various aspects of the optimization of device performances are described. The impact of self-heating effects in device was analyzed in several different areas. All the results are used for designing and optimizing SiGe HBTs on SOI devices performance.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; optimisation; semiconductor device models; semiconductor materials; silicon-on-insulator; thick film circuits; SiGe; electrothermal behavior; npn HBT; optimization; physical simulation; self-heating effect investigation; thick-film SOI substrate; Heterojunction bipolar transistors; Performance evaluation; Silicon germanium; Silicon on insulator technology; Substrates; Thermal resistance; SiGe HBTs; self-heating effects; silicon-on-insulator;
Conference_Titel :
Consumer Electronics (GCCE), 2012 IEEE 1st Global Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-1500-5
DOI :
10.1109/GCCE.2012.6379664
