Title :
New technology of fabrication of microwave power transistors
Author :
Snitovsky, Yu.P.
Author_Institution :
Belarusian State Univ. of Inf. Sci. & Electron., Minsk, Belarus
Abstract :
An experimental evaluation is presented concerning the common-emitter parameters of silicon n-p-n transistors designed for a frequency band above 1 GHz. The configuration of the emitter and collector junctions essentially embodies a new concept whereby injection efficiency is increased by lateral injection. Exposure of P+ ions of Mo-n+Si ohmic contacts followed by annealing at low temperatures reduces the value of contact resistance, ρc, and accelerates the recombination of minority carriers in the interface region.
Keywords :
UHF bipolar transistors; annealing; bipolar transistors; electron-hole recombination; microwave bipolar transistors; microwave power transistors; p-n junctions; power bipolar transistors; semiconductor technology; silicon; Mo-Si:P; bipolar transistors; collector junction; common-emitter parameters; emitter junction; interface region; low temperature annealing; microwave power transistor fabrication technology; minority carrier recombination; silicon n-p-n transistors; Annealing; Contact resistance; Fabrication; Frequency; Microwave technology; Microwave transistors; Ohmic contacts; Power transistors; Silicon; Temperature;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183338
