Title :
A study on the ferroelectric properties of PZT heterolayered thin films
Author :
Lee, S.G. ; Park, I.G. ; Bae, S.G. ; Lee, Y.H.
Author_Institution :
Seonam Univ., Chonbuk, South Korea
Abstract :
PZT(20/80)/PZT(80/20) heterolayered thin films were fabricated by the spin-coating method. All PZT heterolayered films showed dense and homogeneous structure without the presence of rosette-type microstructure or pyrochlore phase. The lower PZT layers provided the nucleation site for the formation of perovskite phase in upper PZT films. The relative dielectric constant, remanent polarization and coercive field of the PZT-6 heterolayered films were 1385, 8.13 μC/cm 2 and 12.5 kV/cm, respectively. The polarization switching time at ±10 V applied voltage of the PZT-6 heterolayered films was 0.15 μsec
Keywords :
crystal microstructure; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; nucleation; permittivity; spin coating; -10 to 10 V; 0.15 mus; PZT; PZT heterolayered thin films; PbZrO3TiO3; coercive field; dense homogeneous structure; ferroelectric properties; nucleation site; perovskite phase; polarization switching time; relative dielectric constant; remanent polarization; spin-coating method; Coatings; Crystallization; Dielectric materials; Dielectric thin films; Electrodes; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Transistors;
Conference_Titel :
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location :
Toyohashi
Print_ISBN :
4-88686-050-8
DOI :
10.1109/ISEIM.1998.741678
