Title :
Fractal dimension of semiconducting fractal sensors
Author :
Danik, G. ; Gorobets, N.N. ; Tolstaya, A.A. ; Timonyk, V.A.
Author_Institution :
Kharkiv Karazin Nat. Univ., Kharkov, Ukraine
Abstract :
Metal oxides are used for analysis of gas in the air in nano-dispersion semiconducting sensors developed in recent years. The fractal dimension of such a semiconductor sufficiently influences the character of the electrical conductivity and hence the sensitivity and operating speed of the sensor. The work considers the fractal properties of the structure of the sensitive weight of a semiconductor sensitive element (SE) for the detection of dangerous gas molecules. The way of defining the fractal dimension of the sensitive weight is shown by means of resistance measurement at high frequencies.
Keywords :
electric resistance; electric sensing devices; electrical conductivity; fractals; gas sensors; semiconductor devices; electrical conductivity; fractal dimension; gas analysis; metal oxides; nano-dispersion semiconducting sensors; operating speed; resistance measurement; semiconducting fractal sensors; semiconductor sensitive element; sensitive mass; sensitive weight; sensitivity; Conductivity; Current measurement; Electrical resistance measurement; Fractals; Frequency measurement; Gas detectors; Lead; Skin effect; Surface resistance; Surface structures;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183339