DocumentCode :
2498028
Title :
Relation between residual voltage ratio and microstructural parameters of ZnO varistors
Author :
Li, Shengtao ; Xie, Feng ; Liu, Fuyi
Author_Institution :
Inst. of Electr. Insulation, Xi´´an Jiaotong Univ., China
fYear :
1998
fDate :
27-30 Sep 1998
Firstpage :
39
Lastpage :
42
Abstract :
The effect of thickness on residual voltage ratio Kr of ZnO varistors is experimentally studied, which shows that a dimensional effect of Kr also exists. The relations are experimentally investigated between residual voltage ratio Kr and breakdown strength E1mA, and Kr and microstructural parameters. It is shown that Kr decreases with E1mA, and increases with average grain size μ. An integrated parameter the product of average grain size μ and grain size variance σ2 is found to be a better parameter to show the relation between electrical properties and microstructure of ZnO varistors. A microstructural model for simulation is proposed. By using computer, the relations are simulated between Kr and thickness, Kr and average grain size μ & Kr and the product σ2μ. The simulated results are consistent with experimental ones
Keywords :
II-VI semiconductors; grain size; semiconductor device breakdown; varistors; zinc compounds; ZnO; ZnO varistors; breakdown strength; dimensional effect; grain size; grain size variance; microstructural parameters; residual voltage ratio; thickness; Breakdown voltage; Circuit simulation; Computational modeling; Computer simulation; Electric breakdown; Grain size; Microstructure; Shape; Varistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location :
Toyohashi
Print_ISBN :
4-88686-050-8
Type :
conf
DOI :
10.1109/ISEIM.1998.741679
Filename :
741679
Link To Document :
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