Title :
Dielectric property of sol-gel SiO2 thin film
Author :
Shoubin, Zhang ; Xinsheng, Wang ; Yoshimura, Noboru
Author_Institution :
Dept. of Electr. & Electron. Eng., Akita Univ., Japan
Abstract :
This study attempts to formulate dielectric properties of SiO2 films deposited by hydrochloric acid catalyzed sol-gel solution. This solution, with H2O:TEOS ratio between 10 and 15, is reported forming high density, small pore size film needing a low sintering temperature. Moreover, carbon in this kind of film is also easier to be burn off than that in the base catalyzed films. To elucidate the mechanism of dielectric dispersion in low temperature (800°C) annealed samples, chemical composition and physical structure of the annealed oxide are analyzed. In addition, the effect of environment moisture is also investigated
Keywords :
annealing; crystal microstructure; dielectric thin films; liquid phase deposition; permittivity; porous materials; silicon compounds; sintering; sol-gel processing; 800 C; H2O:TEOS ratio; SiO2; chemical composition; dielectric dispersion; dielectric properties; dielectric property; environment moisture; high density; hydrochloric acid catalyzed sol-gel solution; low sintering temperature; physical structure; small pore size film; sol-gel SiO2 thin film; Annealing; Dielectric constant; Dielectric losses; Dielectric thin films; Frequency; Humidity; Moisture; Polarization; Temperature dependence; Testing;
Conference_Titel :
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location :
Toyohashi
Print_ISBN :
4-88686-050-8
DOI :
10.1109/ISEIM.1998.741680
