Title :
Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons
Author :
Shimoto, S. ; Fujimaki, M. ; Miyazaki, N. ; Nishihara, Y. ; Ohki, Y. ; Imamura, K. ; Terasawa, K.
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
Abstract :
In this paper, we report the difference in absorption spectrum that has a close relation to photosensitivity and the improvement of the quality by thermal annealing between two Ge-doped SiO2 planar waveguides synthesized by different methods
Keywords :
annealing; germanium; glass structure; light absorption; optical glass; optical planar waveguides; silicon compounds; ultraviolet radiation effects; Ge-doped SiO2 planar waveguides; SiO2:Ge; absorption spectrum; photosensitivity; structural changes; thermal annealing; ultraviolet photons; Absorption; Annealing; Bragg gratings; Optical devices; Optical fibers; Optical planar waveguides; Optical waveguides; Planar waveguides; Surface treatment; Waveguide transitions;
Conference_Titel :
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location :
Toyohashi
Print_ISBN :
4-88686-050-8
DOI :
10.1109/ISEIM.1998.741681
