Title :
A novel insulated-gate InP/InAlAs MODFET
Author :
Fathimulla, A. ; Gutierrez, D. ; Hier, H.
Author_Institution :
AlliedSignal Aerosp. Co., Columbia, MD, USA
Abstract :
The authors present the results obtained with a novel insulated gate InP/InAlAs modulation doped FET (IG-MODFET) for power applications. The advantage of this device over the InP metal-insulator-semiconductor FET (MISFET) is that its channel is a two-dimensional electron gas, which will give a higher channel mobility, and consequently a higher gain, and operating frequency. Another advantage is the separation of the channel electrons from the InP/SiO2 interface, which should result in lower drain-current drift. The results indicate that the IG-MODFET has great potential for high power applications with stable DC characteristics. The microwave performance obtained for a 1.0 μm gate-length IG-MODFET exceeded that of the InP MISFET
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; indium compounds; insulated gate field effect transistors; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; two-dimensional electron gas; 1 micron; 1.0 μm gate-length IG-MODFET; IG-MODFET; InP-InAlAs; higher channel mobility; higher gain; insulated-gate InP/InAlAs MODFET; lower drain-current drift; microwave performance; operating frequency; power applications; semiconductor; stable DC characteristics; two-dimensional electron gas; Electron mobility; Epitaxial layers; FETs; HEMTs; Indium compounds; Indium phosphide; Insulation; MISFETs; MODFETs; Metal-insulator structures;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380592
