A novel insulated-gate InP/InAlAs MODFET

Author

Fathimulla, A. ; Gutierrez, D. ; Hier, H.

Author_Institution

AlliedSignal Aerosp. Co., Columbia, MD, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

428

Lastpage

431

Abstract

The authors present the results obtained with a novel insulated gate InP/InAlAs modulation doped FET (IG-MODFET) for power applications. The advantage of this device over the InP metal-insulator-semiconductor FET (MISFET) is that its channel is a two-dimensional electron gas, which will give a higher channel mobility, and consequently a higher gain, and operating frequency. Another advantage is the separation of the channel electrons from the InP/SiO₂ interface, which should result in lower drain-current drift. The results indicate that the IG-MODFET has great potential for high power applications with stable DC characteristics. The microwave performance obtained for a 1.0 μm gate-length IG-MODFET exceeded that of the InP MISFET

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; indium compounds; insulated gate field effect transistors; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; two-dimensional electron gas; 1 micron; 1.0 μm gate-length IG-MODFET; IG-MODFET; InP-InAlAs; higher channel mobility; higher gain; insulated-gate InP/InAlAs MODFET; lower drain-current drift; microwave performance; operating frequency; power applications; semiconductor; stable DC characteristics; two-dimensional electron gas; Electron mobility; Epitaxial layers; FETs; HEMTs; Indium compounds; Indium phosphide; Insulation; MISFETs; MODFETs; Metal-insulator structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380592

Filename

380592