Reduction of dielectric loss of sputtered tantalum oxide films

Dielectric properties (ε and tan δ) of thin sputtered tantalum oxide films have been measured in the low frequency range. Anomalous large values of ε and tan δ have been observed at high temperatures above 100°C. The heating of the substrate during the sputtering has a significant effect on the dielectric properties of the Ta oxide thin films. Samples prepared at substrate temperature above 200°C show very low dielectric loss