Title :
Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films
Author :
Nishikawa, H. ; Fukui, H. ; Watanabe, E. ; Ito, D. ; Seol, K.S. ; Ohki, Y.
Author_Institution :
Dept. of Electr. Eng., Tokyo Metropolitan Univ., Japan
Abstract :
The purpose of this paper is to characterize the point defects in a-SiO2 films including thermal a-SiO2 and those prepared by the PE-CVD and SIMOX techniques. Particular emphasis is placed on the results of PL and ESR in thermal a-SiO2 films implanted with B or P ions. The PL decay characteristics are also compared with those observed for other types of a-SiO2 prepared by the PE-CVD and SIMOX techniques
Keywords :
SIMOX; amorphous state; boron; dielectric thin films; noncrystalline defects; paramagnetic resonance; phosphorus; photoluminescence; plasma CVD coatings; point defects; radiative lifetimes; silicon compounds; ESR; PE-CVD; PL decay characteristics; SIMOX techniques; SiO2:B,P; a-SiO2 films; amorphous SiO2 films; defects; electron-spin-resonance; photoluminescence; point defects; thermal a-SiO2; Amorphous materials; Atmospheric measurements; Optical films; Paramagnetic resonance; Photoluminescence; Plasma measurements; Pulse measurements; Semiconductor films; Substrates; Temperature;
Conference_Titel :
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location :
Toyohashi
Print_ISBN :
4-88686-050-8
DOI :
10.1109/ISEIM.1998.741684
