Noise in integrated optical receiver front-ends employing InP/InGaAs HBTs

Author

Liu, Q.Z. ; Pulfrey, D.L.

Author_Institution

Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada

fYear

1993

fDate

19-22 Apr 1993

Firstpage

417

Lastpage

419

Abstract

The authors present calculations of the equivalent input noise current spectral density in both tuned and untuned front-ends employing InP/InGaAs heterostructure bipolar transistors (HBTs) and identify the dominant transistor-related components of the noise. The receiver sensitivity will depend ultimately on the front-end noise. Results are presented for receivers based on InP/InGaAs HBTs as used in either 1 GB/s or 10 GB/s demonstration units. The small-signal parameters for these transistors are shown

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit noise; integrated optoelectronics; optical receivers; 1 GB/s; 10 GB/s; InP-InGaAs; InP/InGaAs HBTs; heterostructure bipolar transistors; input noise current spectral density; integrated optical receiver front-ends; receiver sensitivity; semiconductor; small-signal parameters; Circuit noise; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MODFETs; Optical noise; Optical receivers; Photodiodes; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380595

Filename

380595