High-performance 0.15 μm-gatelength OMVPE-grown InAlAs/InGaAs MODFETs

Author

Adesida, I. ; Nummila, K. ; Tong, M. ; Caneau, C. ; Bhat, R.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

405

Lastpage

408

Abstract

The DC and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 μm T-gates fabricated in a organo-metallic vapor phase epitaxy (OMVPE)-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, g_m, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, f_T, of 187 GHz are shown. To date, this is the highest f_T reported for OMVPE-grown MODFETs

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor growth; vapour phase epitaxial growth; 0.15 μm T-gates; 0.15 micron; 1080 mS/mm; 187 GHz; InAlAs-InGaAs; MODFETs; extrinsic transconductance; microwave performance; modulation-doped field effect transistors; semiconductor; unity current-gain cutoff frequency; Arthritis; Doping; Etching; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380598

Filename

380598