Title :
A novel InGaAs Schottky-2DEG diode
Author :
Marso, M. ; Kordos, P. ; Fox, A. ; Hardtdegen, H. ; Meyer, R. ; Luth, H.
Author_Institution :
Inst. fuer Schicht- und Iontentechnik, Julich, Germany
Abstract :
The preparation and properties of planar pseudomorphic InGaAs Schottky two-dimensional electron gas (2DEG) diodes are described. Single- and double-barrier diodes were prepared on metal-organic vapor phase epitaxial (MOVPE) grown modulation doped FET (MODFET)-like structures. Due to the current flow along the strained InGaAs channel the Schottky-2DEG diodes exhibit high breakdown voltage, Ubr≃55 V. On double-barrier diodes extremely high capacitance ratios Cmax/Cmin up to 86 and varactor sensitivities S(1V) up to about 11, were measured at 10 MHz. From high-frequency analysis it follows that the diode capacitance and the series resistance decrease strongly with increased frequency in agreement with calculation
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; indium compounds; two-dimensional electron gas; 10 MHz; 55 V; InGaAs; InGaAs Schottky-2DEG diode; current flow; double-barrier diodes; extremely high capacitance ratios; high breakdown voltage; series resistance; single barrier diodes; varactor sensitivities; Capacitance; Electrons; Epitaxial growth; Epitaxial layers; FETs; HEMTs; Indium gallium arsenide; MODFETs; Schottky diodes; Varactors;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380600
