Barrier height enhancement of Schottky junctions formed on phosphidized InGaAs

Author

Sugino, Takashi ; Sakamoto, Yoshifumi ; Nomoto, Kuninori ; Sumiguchi, Tatsuo ; Shirafuji, Junji

Author_Institution

Dept. of Electr. Eng., Osaka Univ., Suita, Osaka, Japan

fYear

1993

fDate

19-22 Apr 1993

Firstpage

687

Lastpage

690

Abstract

The Schottky barrier height of phosphidized InGaAs by using phosphine plasma has been studied. True barrier height estimated from the Richardson plot is found to be significantly dependent on the metal work function. Phosphidization forms a thin phosphorus layer in addition to substitution of phosphorus for arsenic sites, resulting in formation of a metal-insulator-semiconductor (MIS) Schottky junction. An effective barrier height as high as 0.7 eV was attained for a Au/InGaAs MIS Schottky junction as measured from the room temperature current-voltage characteristic, while the true barrier height of 0.55 eV, which is close to the Schottky limit, is estimated from the Richardson plot

Keywords

III-V semiconductors; MIS devices; MIS structures; Schottky barriers; gallium arsenide; gallium compounds; gold; indium compounds; semiconductor junctions; semiconductor-metal boundaries; surface treatment; work function; 0.55 eV; 0.7 eV; 20 degC; Au-P-InGaAsP; MIS Schottky junction; Richardson plot; Schottky barrier height; Schottky junctions; metal work function; metal-insulator-semiconductor; phosphidized InGaAs; phosphine plasma; room temperature current-voltage characteristic; Atomic layer deposition; Gold; Indium gallium arsenide; Insulation; Metal-insulator structures; Plasma density; Plasma temperature; Schottky barriers; Surface cleaning; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380601

Filename

380601