DocumentCode
2498344
Title
Is NMOSFET Hot Carrier Lifetime Degraded By Charging Damage?
Author
Cheung, K.P. ; Misra, D. ; Steiner, K.G. ; ColonelI, J.I. ; Chang, C.P. ; Lai, W.Y.C. ; Liu, C.T. ; Liu, R. ; Pai, C.S.
Author_Institution
Lucent Technologies
fYear
1997
fDate
13-14 May 1997
Firstpage
186
Lastpage
188
Keywords
CMOS process; CMOS technology; Degradation; Electron traps; Hot carriers; MOSFET circuits; Plasma density; Plasma measurements; Stress; Substrate hot electron injection;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location
Monterey, California, USA
Print_ISBN
0-9651-5771-7
Type
conf
DOI
10.1109/PPID.1997.596737
Filename
596737
Link To Document