Title :
Loss and index change in GaInAsP/InP multiple quantum well QCSE tuning element for surface emitting lasers
Author :
Yokouchi, N. ; Uchida, T. ; Miyamoto, T. ; Inaba, Y. ; Mori, K. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Midori-ku, Yokohama, Japan
Abstract :
The authors investigated some fundamental characteristics of chemical beam epitaxy (CBE) grown GaInAsP/InP multiple quantum wells (MQWs) for a wavelength tuner and estimated the wavelength shift for realizing wavelength tunable surface emitting (SE) lasers. They observed the quantum confined Stark effect in a GaInAsP/InP MQW structure grown by CBE and estimated the refractive index change, which was as large as 1%. By using these results, the possibility realizing a wavelength tunable SE laser with a MQW tuner is exhibited and the maximum wavelength change is expected to be as large as 7Å
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; laser accessories; laser tuning; optical losses; quantum confined Stark effect; quantum well lasers; refractive index; surface emitting lasers; GaInAsP-InP; GaInAsP/InP multiple quantum well QCSE tuning element; MQW tuner; chemical beam epitaxy; index change; losses; quantum confined Stark effect; refractive index change; surface emitting lasers; wavelength shift; wavelength tunable SE laser; wavelength tuner; Chemical lasers; Epitaxial growth; Indium phosphide; Laser beams; Laser tuning; Molecular beam epitaxial growth; Quantum well devices; Surface emitting lasers; Tunable circuits and devices; Tuners;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380604
