Title :
Low voltage electroabsorption light modulator using an InGaAs/InP superlattice
Author :
Chen, C.W. ; Kim, J.W. ; Silvestre, P. ; Hafich, M.J. ; Woods, L.M. ; Robinson, G.Y. ; Lile, D.L.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Ft. Collins, CO, USA
Abstract :
Spectral transmission, reflection and photocurrent absorption results, obtained on gas source molecular beam epitaxy (MBE) grown InGaAs/InP multiple quantum wells (MQWs), and superlattice positive-intrinsic-negative (PIN) diode structures, demonstrate, for the first time in this materials system, that similar modulation to MQW structures can be achieved using superlattices, but at significantly lower operating voltages. Specifically, reflection changes of greater than 30% were observed for applied biases ≲ 4 V, in nonresonant modulators operating at a wavelength of 1.48 μm. These results suggest the possibility of employing such devices in fast, high density optical modulator arrays operating over the 1.3 to 1.6 μm range
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; p-i-n diodes; photoconductivity; reflectivity; semiconductor superlattices; 1.3 to 1.6 micron; 1.48 micron; 4 V; InGaAs-InP; InGaAs/InP superlattice; gas source molecular beam epitaxy; high density optical modulator arrays; low voltage electroabsorption light modulation; multiple quantum wells; nonresonant modulators; operating voltages; photocurrent absorption; reflection; spectral transmission; Indium gallium arsenide; Indium phosphide; Low voltage; Molecular beam epitaxial growth; Optical arrays; Optical modulation; Optical reflection; Photoconductivity; Quantum well devices; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380605
