Electro-refractive effect and absorption in an InGaAs/InP superlattice structure

Author

Langanay, J. ; Lesterlin, D. ; Emery, J.Y. ; Starck, C. ; Labourie, C. ; Gaumont-Goarin, E. ; Legouezigou, O.

Author_Institution

Alcatel Alsthom Recherche, Marcoussis, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

668

Lastpage

670

Abstract

Results on electro-refraction variations and waveguide absorption in InP-based superlattice modulators are presented. The method employed to measure these parameters using Fabry-Pe´rot resonances versus wavelength is described. Effective index variation as high as 1.7 10^-3 has been obtained, corresponding to a 1.9 10^-2 refractive index variation in multiple quantum well or superlattice structures

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical waveguides; refractive index; semiconductor quantum wells; semiconductor superlattices; Fabry-Pe´rot resonances; InGaAs-InP; InGaAs/InP superlattice structure; absorption; electro-refraction variations; multiple quantum well; refractive index; superlattice modulators; waveguide absorption; Absorption; Indium gallium arsenide; Indium phosphide; Laser tuning; Optical modulation; Power amplifiers; Resonance; Superlattices; Voltage; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380606

Filename

380606