Title :
Electro-refractive effect and absorption in an InGaAs/InP superlattice structure
Author :
Langanay, J. ; Lesterlin, D. ; Emery, J.Y. ; Starck, C. ; Labourie, C. ; Gaumont-Goarin, E. ; Legouezigou, O.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
Results on electro-refraction variations and waveguide absorption in InP-based superlattice modulators are presented. The method employed to measure these parameters using Fabry-Pe´rot resonances versus wavelength is described. Effective index variation as high as 1.7 10-3 has been obtained, corresponding to a 1.9 10-2 refractive index variation in multiple quantum well or superlattice structures
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical waveguides; refractive index; semiconductor quantum wells; semiconductor superlattices; Fabry-Pe´rot resonances; InGaAs-InP; InGaAs/InP superlattice structure; absorption; electro-refraction variations; multiple quantum well; refractive index; superlattice modulators; waveguide absorption; Absorption; Indium gallium arsenide; Indium phosphide; Laser tuning; Optical modulation; Power amplifiers; Resonance; Superlattices; Voltage; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380606
