DocumentCode :
2498432
Title :
Long-wavelength semiconductor lasers for high resolution spectroscopy
Author :
Baranov, A.N. ; Imenkov, A.N. ; Sherstnev, V.V. ; Yakovlev, Yu.P.
Author_Institution :
URA CNRS, Univ. de Montpellier II, France
fYear :
1993
fDate :
19-22 Apr 1993
Firstpage :
660
Lastpage :
662
Abstract :
The authors report an InPAsSb laser for the spectral range of 2.8-3.6 μm for application to diode laser spectroscopy (DLS). For high resolution spectroscopy it is necessary to have single mode or quasi single mode lasers with continuous tuning of the emission wavelength by current or/and by temperature. The important parameter for DLS is the shift of a longitudinal mode position with current and temperature, which is discussed. Good mode structure of the laser emission, relatively high optical power and a possibility of continuous wave operation above liquid nitrogen temperature are the attractive factors for spectroscopy. First experiments showed that the lasers can be successfully used for DLS
Keywords :
III-V semiconductors; indium compounds; infrared spectroscopy; laser modes; laser tuning; semiconductor lasers; 2.8 to 3.6 micron; 77 K; InPAsSb laser; continuous tuning; continuous wave operation; diode laser spectroscopy; high optical power; high resolution spectroscopy; laser emission; long wavelength semiconductor laser; longitudinal mode position; quasi single mode lasers; single mode; Diode lasers; Laser modes; Laser tuning; Nitrogen; Optical tuning; Power lasers; Semiconductor lasers; Spectroscopy; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
Type :
conf
DOI :
10.1109/ICIPRM.1993.380608
Filename :
380608
Link To Document :
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